[PhD] Reliability and Short-Circuit Robustness of GaN Power HEMTs F/H

The Saint Exupéry Technological Research Institute (IRT) is an accelerator for science, technological research and transfer to the aeronautics and space industries for the development of innovative solutions that are safe, robust, certifiable and sustainable.

We offer on our sites in Toulouse, Bordeaux, Sophia Antipolis an integrated collaborative environment made up of engineers, researchers, experts and doctoral students from industrial and academic backgrounds for research projects and R\&T services backed by technological platforms around 4 areas: advanced manufacturing technologies, greener technologies, methods \& tools for the development of complex systems and smart technologies.

Our developed technologies meet the needs of industry, integrating the results of academic research.

Toulouse

IRT Saint Exupéry is the main tenant of building B612, Toulouse Aerospace's innovation center, occupying 10,900 m² of the 24,000 m² available. Located in the Montaudran district, at the heart of a rich and rapidly changing ecosystem, the B612 is home to the major players in innovation: U\-Space, Airbus OneWeb satellites, ANITI, ESSP, Aerospace Valley and Capgemini.

3 reasons to join us:

• Take part in innovative research projects, at the service of French technological research and for the benefit of industry established on national and European territory.


• Living your passion for technology, giving yourself the freedom to innovate and developing your pioneering and team spirit!


• Evolve in a collaborative and multicultural environment, working alongside collaborators from academic research or industry: researchers, doctoral students, engineers, technicians, etc.

Gallium Nitride (GaN) power transistors are increasingly deployed in high\-efficiency power conversion systems due to their superior switching performance and high power density. However, their behavior under extreme operating conditions, particularly short\-circuit events, remains a critical reliability concern limiting their adoption in safety\-critical applications such as aerospace, automotive and energy systems.

The objective of this PhD is to investigate the physical degradation mechanisms governing short\-circuit stress in enhancement\-mode GaN HEMTs and to develop predictive methodologies capable of identifying device robustness before catastrophic failure.

The research activities will include:

• Electrical characterization of commercial GaN power transistors.


• Development and implementation of advanced short\-circuit test benches.


• Investigation of degradation mechanisms under repetitive and single\-event short\-circuit stresses.


• Analysis of electrical parameter drifts before and after aging tests.


• Correlation of failure modes with electrical signatures and device technology.


• Development of TCAD models of GaN HEMTs.


• Electro\-thermal simulation of short\-circuit events.


• Identification of physical indicators linked to device robustness and lifetime.


• Correlation between simulation results and experimental observations.


• Development of innovative screening methodologies for GaN power devices.


• Identification of measurable electrical indicators capable of predicting device robustness.


• Publication of scientific results in leading journals and conferences.


• Presentation of results to industrial and academic partners.


• Contribution to project deliverables and technical reports.

Profile
-----------

Master's degree (or equivalent) in Power Electronics, Microelectronics, Semiconductor Physics, Applied Physics, or a related field.

Technical Skills

• Strong background in Power Electronics


• Solid understanding of Semiconductor Device Physics


• Hands\-on experience with Power Converters


• Familiarity with Wide\-Bandgap Power Devices (GaN and/or SiC)


• Knowledge of Reliability mechanisms in Electronic Components


• Experience with Electrical Characterization Techniques


• Proficiency in Electro\-Thermal Simulation


• Experience with Circuit Simulation tools, particularly LTspice


• Proficiency in Data Processing and Statistical Analysis, preferably using Python


• Exposure to TCAD Simulation Tools (e.g. Sentaurus, Silvaco Atlas) is a plus


• Good command of Scientific Writing and Reporting

• Demonstrated capacity for autonomy and initiative in research tasks


• Strong scientific curiosity and motivation to explore new topics


• Ability to work effectively in a collaborative team environment


• Pedagogical skills, with an interest in sharing and explaining results


• Strong ability to synthesize and communicate complex results to diverse audiences

Cette annonce provient de indeed. Voir l'annonce originale ↗